Multiple e-probe waveguide power combiner/divider

ABSTRACT

A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority to provisional application Ser. No.61/332,944, titled “MULTIPLE E-PROBE WAVEGUIDE POWER COMBINER/DIVIDER”,filed May 10, 2010, which is incorporated by reference herein in itsentirety.

TECHNICAL FIELD

This disclosure relates generally to power combiner/dividers and moreparticularly to waveguide power combiner/dividers.

BACKGROUND

As is known in the art, many applications require the combination orreciprocally, division (i.e., distribution), of radio frequency (rf)energy from or to many sources. These power combiner/dividers may takemany forms in many transmission line media; such as waveguide,microstrip and strip transmission line.

For example, power combiners using waveguide transmission are describedin papers entitled “A Ka-Band Power Amplifier Based on theTravelling-Wave Power-Dividing/Combining Slotted-Waveguide Circuit”, byJiang et al, IEEE Transactions on Microwave Theory and Techniques, Vol.52, No, 2. February 2004 and “A Ka-Band Power Amplifier Based on aLow-Profile Slotted-Waveguide Power-Combining/Dividing Circuit”, byJiang et al. IEEE Transactions on Microwave Theory and Techniques, Vol.51, No. 1, January 2004, “A Monopole-Probe-Based Quasi-Optical AmplifierArray”, by Kolias et al; IEEE Transactions on Microwave Theory andTechniques, Vol. 45, No. 8, pages 1204-1207. January 1997; “AMicrostrip-Based Unit Cell for Quasi-Optical Arrays”, by Kolias, et al.,IEEE Microwave and Guided Wave Letters, Vol. 3 No. 9, pages 330-33,September 1993; and, “40-W CW Broad-Band Spatial Power Combiner UsingDense Finline Arrays”, Nai-Shoo et al., IEEE Transactions on MicrowaveTheory and Techniques Vol. 47, No. 7, pages 1070-1076, July 1999.

One application where power combining is desirable is in combining powerfrom a plurality of power transistors formed in a monolithic microwaveintegrated circuit (MMIC). Here, because of the small geometriesinvolved, a relatively small power combiner is required. Moreparticularly, traditionally, milli-meter (mm)-wave monolithic microwaveintegrated circuits have been designed in two-dimensions (i.e., planar)that has limited power-combining approaches to planar, corporatecombiners. While the papers referred to above describe a 3D approach topower combining, the arrangements described therein do not readily orpractically lend themselves to MMICs because of their large size.

SUMMARY

In accordance with the present disclosure, a microwave structure isprovided having: a waveguide; a plurality of probes, each one having afirst end electrically coupled to an output and a second end projectingoutwardly from the supporting structure and into the waveguide, theprobes being spaced from a rear wall of the waveguide a distance n (λ/4)+/−0.2 λ, where λ is the nominal operating wavelength of energy passingbetween the probes and the waveguide and n is an odd integer.

With such an arrangement, the power combiner is able to combine powerfrom amplifiers formed as an MMIC.

In one embodiment, the microwave structure includes a plurality ofamplifiers and wherein each one of the first ends is coupled to acorresponding one of the amplifiers.

In one embodiment, the probes are disposed in a common region of thewaveguide having maximum electric field coupling to the probes.

In one embodiment, the probes are disposed in a common region of thewaveguide, such region having a common electric field maximum within thewaveguide.

With such an arrangement, coupling into the waveguide using E-fieldprobes provides an ultra low-loss method for combining large numbers ofamplifier cells.

In accordance with the present disclosure, a microwave structure isprovided having: a waveguide; a plurality of amplifiers disposed on asupporting structure; a plurality of probes, each one having a first endelectrically coupled to an output of at least one of the plurality ofamplifiers and a second end projecting outwardly from the supportingstructure and into the waveguide, the probes being spaced from a rearwall of the waveguide a distance n (λ/4) +/−0.2 λ, where λ is thenominal operating wavelength of energy passing between the probes andthe waveguide and n is an odd integer.

With such an arrangement, the power combiner is able to combine powerfrom amplifiers formed as an MMIC.

In one embodiment, the waveguide here, for example, is a rectangularwaveguide and the probes are E-field probes that extend parallel tonarrow sidewalls of the waveguide and are arrayed along a directionperpendicular to the narrow sidewalls of the waveguide and wherein theenergy passes through the waveguide along a direction parallel to thesidewalls of the waveguide.

In one embodiment, the waveguide is supported by the support structure.

In one embodiment, the support structure is a single crystal supportstructure.

In one embodiment, the microwave structure is a monolithic microwaveintegrated circuit structure.

In one embodiment, a first portion of the probes have lengths (i.e.,heights) different from a second portion of the probes. In oneembodiment, an additional probe is provided having a first endelectrically coupled to a transmission line supported by the supportstructure, such additional probe being disposed in the waveguide forcoupling the energy passing between the waveguide and the transmissionline, such additional probe being spaced from a front wall of thewaveguide a distance n(λ/4)+/−0.22 λ.

In one embodiment, the probes are disposed in a common region of thewaveguide having maximum electric field coupling to the probes.

In one embodiment, the probes are disposed in a common region of thewaveguide, such region having a common electric field maximum within thewaveguide.

With such an arrangement, coupling into the waveguide using E-fieldprobes provides an ultra low-loss method for combining large numbers ofamplifier cells.

The details of one or more embodiments of the disclosure are set forthin the accompanying drawings and the description below. Other features,objects, and advantages of the disclosure will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF DRAWINGS

FIG. 1 is an exploded, isometric sketch of a power combiner according tothe disclosure;

FIG. 1A is a side elevation view of the power combiner of FIG. 1;

FIG. 1B is a diagrammatical sketch of an arrangement of amplifiers andprobes used in the power combiner of FIG. 1 in accordance with oneembodiment of the disclosure;

FIG. 1C is a diagrammatical sketch of an arrangement of amplifiers andprobes used in the power combiner of FIG. 1 in accordance with anotherembodiment of the disclosure; and

FIG. 1D is a diagrammatical sketch of an arrangement of amplifiers andprobes used in the power combiner of FIG. 1 in accordance with stillanother embodiment of the disclosure;

FIG. 2 is a cross sectional view of the power combiner of FIG. 1, suchcross section being taken along line 2-2 of FIG. 1A;

FIG. 3 is a plan view of a cross section taken along a line 3-3 passingthrough a portion of the power combiner of FIG. 2;

FIG. 4 is a full three-dimensional, electromagnetic computer simulationshowing reflection loss magnitude of an output probe used in the powercombiner of FIG. 6 as well as coupling magnitude for each of fifteeninput probes used in the power combiner of FIG. 6 as a function ofoperating frequency of the power combiner of FIG. 6;

FIGS. 5A-5N and 5M′-5O′ are cross sectional diagrammatical sketchesshowing the steps used to fabricate the power combiner of FIG. 1; and

FIGS. 6A-6C show top, side and back views, respectively of the powercombiner of FIG. 1

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

Referring now to FIGS. 1, 1A and 2, a microwave structure, here a powercombiner 10 is shown having: a waveguide 12; a plurality of transistorshere arranged as amplifiers 14 (FIG. 2) disposed on a supportingstructure 16 (FIG. 1); a plurality of probes (herein sometimes referredto as input probes) 18, each one having a first end electrically coupledto an output of a corresponding set of the plurality of amplifiers 14.

More particularly, FIG. 1B shown on arrangement of amplifiers 14′coupled to, in this example, four probes 18. Here, each one of theamplifies 14′ includes two cascaded transistors 11 a, 11 b; a first oneof the transistors 11 a being coupled to an output of an RF distributionnetwork through a first impedance matching network 13 a, a second one ofthe transistors 11 b being coupled to the output electrode, here drainelectrode D, of FET transistor 11 a, through a second impedance matchingnetwork 13 b, the output, here drain electrode D, of FET transistor 11 bbeing coupled to the probe 18 through a third impedance matching network13 c, and the output of the third impedance matching network 13 c beingconnected directly to the probe 18.

FIG. 1C shows another arrangement with each probe 18 being fed by aplurality of amplifiers, here four amplifies 14 with outputs of theamplifiers 14 feeding points P distributed uniformly about acircumferential region of the probe 18. It is also noted that in thisarrangement, the impedance matching network 13 b of amplifiers 14′ hasbeen eliminated because here, the output electrode, here drain Delectrode is connected directly to the probe 18. More particularly, aswill be described, the probe 18 is formed in direct contact with thedrain electrode D of the transistors 11 b. Here, the length (i.e.,height) of the probe 18 is selected to provide the impedance matchingperformed by impedance matching network 13 c (FIG. 1B).

FIG. 1D shows still another embodiment, here each probe 18 is fed byeight amplifiers 14. Thus, as shown in FIG. 2, there is a set of eightamplifiers 14 and a second end projecting outwardly from the supportingstructure 16 and into the interior of the waveguide 12, as shown in FIG.3 for an exemplary one of three rows of the probes 18. The probes 18 arespaced from a rear or back wall 20 of the waveguide 12 a distancebetween n(λ/4) −0.2 λ and n(λ/4) +0.2 λ (i.e., n(λ/4) +/−0.2 λ), where λis the nominal operating wavelength of energy passing between the probes18 and the waveguide 12 and n is an odd integer, preferably n is one toprovide the most compact structure. Here, the supporting structure 16 isa single crystal substrate, such as, for example, a III-V, or IVsubstrate such as GaN or silicon, for example.

The amplifiers 14 are formed using conventional integrated circuitfabrication techniques in the upper planar surface of the supportingstructure 16. Here the amplifiers include a FET (not shown) having thegate fed by an input signal coupled to an input pad 21 on the supportingstructure 16 of the power combiner 10, a grounded source and a drainelectrically connected to the probe 18.

The supporting structure 16 also has formed thereon microwavetransmission lines and power lines integrally formed with the amplifiers14 using conventional MMIC fabrication techniques, shown generally bynumerical designation 19 in FIG. 3 and referred to as the Back end ofline (BEOL) structure 17. Note for example power and radio frequency(rf) input and output pads 21 connected to these transmission and powerlines.

A solid dielectric layer 15 (FIG. 3) is formed over the BEOL structure17 in FIG. 3. The bottom wall 23 of the waveguide 12 is then formed overthe dielectric layer 15 using any integrated circuit deposition process.Next apertures are formed in the bottom wall 23, each one of suchapertures being aligned with a cluster of eight amplifiers 14 (FIGS. 2and 3). Next the conductive probes 18 and an output probe 23 (FIGS. 1and 2) are formed in a manner to be described in more detail below inconnection with FIGS. 5A-5N. Suffice it to say here however that thesidewalls and upper wall 25 (FIG. 3) of the waveguide 12 are then formedas will be described to provide the power combiner 10. Here, the probes18 are separated one from an adjacent other one by less than 0.1 λ.

As mentioned above, the probes 18 are also formed using integratedcircuit fabrication techniques in a manner to be described in moredetail below. Suffice it to say here, in this embodiment, there arefifteen probes 18 arranged in three rows 19 a, 19 b and 19 c 4, each rowextending laterally across the wide dimension of the waveguide 12 (FIG.2). The first row 19 a is closet to the back wall 20 of the waveguide 12and such row has eight probes, as indicated. The row 19 c furthest fromthe back wall 20 has two probes 18 disposed in a region midway betweenthe opposing narrow sidewalls 31 (FIG. 2) of the waveguide 12, asindicated. The row 19 b is disposed between the rows 19 a and 19 b andhas five probes 18 disposed in a region midway between the opposingnarrow sidewalls 31 of the waveguide 12, as indicated. It is noted thatthat a first portion of the probes 18 in row 19 a proximate the narrowsidewalls 21 of the waveguide 12 have lengths different from, herehigher than, a second portion of the probes 18 disposed in a regiondistal from the sidewalls 21 of the waveguide 12, i.e., in a region ofrow 19 a disposed in a region midway between the opposing narrowsidewalls 21 of the waveguide 12.

It is to be noted that here, in this embodiment, the row 19 a is at adistance λ/4 from the back wall 20 of the waveguide 12 and that row 19 bis at a distance λ/4+0.09 λ from the back wall 20 of the waveguide 12and that row 19 c is at a distance λ/4+0.18 λ from the back wall 20 ofthe waveguide 12.

It is noted that here, in this embodiment, each one of the probes 18 iscoupled to a cluster of eight of the amplifiers 14 disposed radiallyaround the probe 18. Thus, eight of the amplifiers 14 radially combineto feed each one of the E-field probes 18, as indicated more clearly inFIG. 3. Thus, here in this embodiment, there are one hundred and twentyamplifiers 14 (operating in the linear region) in the power combiner.

An additional probe 23 (sometimes referred to herein as an output probe)is provided having a first end electrically coupled to a transmissionline 19 in the BEOL structure 17 (FIG. 3) supported by the supportstructure 16, such additional probe 23 extending from the supportstructure 16 vertically into the waveguide 12 for coupling the energypassing between the waveguide 12 and the transmission line 37. Theadditional probe 23 is spaced from a front wall 39 of the waveguide adistance n(λ/4)+/−0.2 λ. In this embodiment, the distance is 0.12 λ. Theoutput probe 23 is therefore at maximum electric field. Here again, n ispreferably 1.

Thus, the probes 18 are disposed in a common region 40 (FIG. 1) of thewaveguide 12 having maximum electric field within the waveguide 12. Theadditional probe 23 is also disposed in a region maximum electric field(i.e., standing wave maximum) within the waveguide 12.

Here the power combiner 10 is configured to operate at 45 Ghz and thewaveguide 12 is an air filled, rectangular waveguide 12, here forexample in this embodiment, the waveguide has a height 1400 micrometersand a width 5690 micrometers, with the narrow sidewalls (i.e., height)extending vertically (perpendicularly) from the planar upper surface ofthe supporting structure 16 and wide sidewalls 31 (i.e., width)extending parallel to the planar upper surface of the supportingstructure 16. Thus, the probes 18 extend perpendicular to the planarupper surface of the supporting structure 16. Here, the waveguide 12supports the TE10 dominant waveguide mode of propagation and the probes18 are E-field probes that extend parallel to narrow sidewalls 31 of thewaveguide 12 and are arrayed along a direction perpendicular to thenarrow sidewalls 31 of the waveguide 12 wherein the energy passesthrough the waveguide 12 along a direction parallel to the sidewalls ofthe waveguide 12.

Here, the waveguide 12 is formed on the supporting structure 16 usingintegrated circuit fabrication techniques, such asphotolithographic-etching, to form the power combiner 10 as a monolithicmicrowave integrated circuit (MMIC).

More particularly, in this embodiment, there are 15 waveguide inputprobes 18 and a single waveguide output probe 23. The configuration ofthe probes 18 is denser in the center of the waveguide 12 to bettermatch the probes 18 to the TE10 dominant waveguide mode. The spacing andheight of the 15 waveguide input probes 18 are optimized such that thecoupling magnitude between each of the 15 input probes 18 and the outputprobe 23 are approximately equal at −11.8 dB. This is illustrated inFIG. 4 which shows the waveguide output probe 23 reflection lossmagnitude as well as the waveguide input probe-to-output probe couplingmagnitude for each of the 15 input probes 18. Each input probe for thisembodiment is matched to 50 ohms, though the technique applies equallywell to other impedances. In addition the number of probes 18 and theirplacement can also be optimized depending on the combiner levelsdesired. The embodiment is also readily scaled in frequency through thereduction of waveguide dimensions and optimization of the E-field probes18.

It is noted from FIG. 4 that the approach has a number of advantages.Compared to free-space combining, the power combiner 10 is much morecompact, and by confining the fields in a waveguide 12, avoids thefree-space difficulties of side-lobe generation and power collection.Also, the E-field-probes avoid the high losses of planar transmissionlines 37. The ultra low loss (0.13 dB) of the combiner achieves higherefficiencies than are possible using serially combined high powerconfigurations such as binary combiners, Wilkinson combiners, ordistributed active transformers.

Referring now to FIGS. 5A through 5N, after forming the microwavetransmission lines and power lines in the BEOL structure 17, thedielectric layer 15, here for example, B-Stageddivinylsiloxane-bis-benzocyclobutene resin, sometimes referred to asBCB, is deposited over the BEOL structure 17 as shown in FIG. 5A.

Next, a photoresist layer 40 is deposited over the dielectric layer 15as shown in FIG. 5B. Next, the photoresist layer 40 is patterned in anyconventional photolithographic-etching manner to form a window 42 (FIG.5B) therein to expose a region over the structure where one the probes18 is to be formed; it being understood that the process shown in FIGS.5A through 5N shows formation of an exemplary one of the probes 18 itbeing understood that the process is used in the formation of all of theprobes 18 and therefore windows 42 would be formed in layer 40 for eachone of the probes 18.

Next, the portion of the structure exposed by the window 42 is etchedusing any conventional etching technique (FIG. 5C) to removed theexposed portion of the dielectric layer 15 and expose the underlyingportion of BEOL structure 17 where the electrode of the FET to which theprobe 18 is to be connected.

Next, a conductive material 43 is deposited over the structure shown inFIG. 5C. Portions of the material 43 become deposited on the photoresistlayer 40 and other portions pass through the window 42 onto the FETelectrode and the resulting structure being shown in FIG. 5D afterlifting off the photoresist layer 40 and the portions of the conductivelayer 43 deposited on the photoresist layer 40. Note that the remainingportion 43 provides a bottom portion of the probe 18.

Next a layer 44 of photoresist is deposited over the structure andpatterned as shown in FIG. 5E using conventionalphotolithographic-etching process to have openings 46. Next, a conductor48 is plated onto the portions of the dielectric layer 40 exposed by theopenings 46 and onto the top of conductor 42 also exposed by theopenings 46, as shown in FIG. 5F.

Next, a layer 50 of photoresist is deposited over the structure andpatterned as shown in FIG. 5G using conventionalphotolithographic-etching process to have openings 52.

Next, a conductor 54 is plated onto the portions of the conductor 48exposed by the openings 54, as shown in FIG. 5H.

Next, a layer 56 of photoresist is deposited over the structure andpatterned as shown in FIG. SI using conventionalphotolithographic-etching process to have openings 58. Next, Next, aconductor 64 is plated onto the portions of the conductor 54 exposed bythe openings 58, as shown in FIG. 5J thereby completing the probe 18 andbottom portions sidewalls of the waveguide. It should be understood thatthe process may be modified so that different probes 18 may be plated tohave different heights. The plating can be done manually or with robots.To obtain different size probes 18, photoresist plating steps areperformed iteratively; i.e., the metal (conductor) thickness of theprobe is “quantized” by the thickness of the photoresist. To make oneprobe shorter than another, the mask (i.e., patterned photoresist) ischanged when the shortest probe is constructed so that photoresistcovers the shorter probe, but not the larger probe. In this way, probescan be made with different lengths (i.e., heights).

Next, a layer 62 of photoresist is deposited over the structure andpatterned as shown in FIG. 5K using conventionalphotolithographic-etching process to have openings 64. Next, a conductor68 is plated onto the portions of the conductor 68 exposed by theopenings 64, as shown in FIG. 5L thereby forming the upper portions ofthe sidewalls of the waveguide.

Next, as shown in FIGS. 5M′, a layer 70 of photoresist is deposited overthe structure and patterned as shown in FIG. 5M′ using conventionalphotolithographic-etching process to have openings 72. The remainingphotoresist blocks 70 are less than about 0.1 λ. and are widelydispersed on the upper surface of the photoresist layer 62 to enablechemical removal (i.e., washing away) of the photoresist layers 62, 56,50 and 44.

Next, a conductor 74 is deposited onto the portions of the conductor 68exposed by the openings 72, and onto the portions of the photoresistlayer 62 exposed by the openings 72 and also onto the photoresist 70 asshown in FIG. 5N′ and also in FIG. 5M which shows the portion of thestructure absent the photoresist 70.

Next, photoresist layers 62, 56, 50 and 44 are chemical removed (i.e.,washed away) through openings 76 (FIG. 5O′) resulting in the structureshown in FIGS. N and 5O′.

The waveguide-based combiner may be monolithically grown on top of theactive silicon chips by Nuvotronics using its PolyStrata process(Nuvotronics, LLC 7586 Old Peppers Ferry Loop, Radford, Va. 24141). Thefeatures of each stratum across the wafer are defined usingphotolithography with ±2 μm accuracy in X-Y alignment between layers.Once a stratum pattern is defined and developed, the photoresist is usedas a mold for plating copper features. The copper is planarized usingchemical-mechanical polishing (CMP) with the photoresist serving as avertical stop for the CMP process. At this juncture, thephotolithography process begins anew, and the steps repeat themselves.This process continues until the entire height of the structure has beenachieved. The photoresist is then dissolved to leave air-filled copperstructures.

FIGS. 6A-6C show top, side and back views, respectively of a powercombiner according to the disclosure having a nominal operatingfrequency of 45 GHz. Note that the probes 18 nearest the back or rearare higher that the probes 18 towards the front with the probes 18 inthe row between the rear and front rows having a height intermediate theheights of the probes in the front and rear rows. Note also, that theprocess described in connection with FIGS. 5A-5M and 5M′-5O′ is used tofabricated the probe 23.

A number of embodiments of the disclosure have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the disclosure. Forexample, while the structure 10 is described as a power combiner, itshould be understood that the structure may be used to distribute orsplit power fed to probe 23 among the plurality of probes 18 underprinciples of reciprocity. Hence the microwave structure 10 is a powercombiner/divider (or power combiner/splitter) structure. Still further,more or less probes 18 may be used combining/dividing different numbersof devices. Further, the top and sidewalls of the waveguide may beformed as a separate unit and then bonded to the bottom wall. Further,while the heights of the probes vary from the front row to the back row,the lengths of the probes may vary along any one of the rows. Still,further, while the ends of the probes are connected to transistorsarranged as amplifiers, the ends of the probes may be connected totransistors arranged in other configurations, such as phase shifters ormay be directly connected to a microwave transmission line as when thecombiner/divider is used without transistors in a passive microwavestructure. Accordingly, other embodiments are within the scope of thefollowing claims.

1. (canceled)
 2. A microwave structure, comprising: a waveguide having arear wall; a plurality of probes, each one of the probes having a firstend electrically coupled to an output and a second end projecting intothe waveguide. the probes being spaced from the rear wall a distancen(λ/4)+/−0.2 λ. where λ is the nominal operating wavelength of energypassing between the probes and the waveguide and n is an odd integer;and a plurality of transistors and wherein the first end of each one ofthe probes is electrically coupled to an output of a corresponding oneof the transistors.
 3. The microwave structure recited in claim 2wherein the transistors are arranged as amplifiers.
 4. (canceled)
 5. Amicrowave structure, comprising: a waveguide; a plurality of probes,each one having a first end electrically coupled to an output and asecond end projecting outwardly from the supporting structure and intothe waveguide, the probes being disposed in a common region of thewaveguide having maximum electric field; and a plurality of transistorsand wherein the first end of each one of the probes is electricallycoupled to an output of a corresponding one of the transistors.
 6. Themicrowave structure recited in claim 5 wherein the transistors arearranged as amplifiers.
 7. A microwave structure, comprising: awaveguide; a plurality of amplifiers; a plurality of probes, each one ofthe probes having a first end electrically coupled to an output of acorresponding one of the plurality of amplifiers and a second endprojecting outwardly from the supporting structure and into thewaveguide, the probes being disposed in a common region of thewaveguide, such region having a common electric field maximum within thewaveguide.
 8. The microwave structure recited in claim 7 including aplurality of transistors and wherein the first end of each one of theprobes is electrically coupled to an output of a corresponding one ofthe transistors.
 9. The microwave structure recited in claim 8 whereinthe transistors are arranged as amplifiers.
 10. A microwave structure,comprising: a waveguide having a rear wall; a plurality of transistorsdisposed on a supporting structure; a plurality of probes, each one ofthe probes having a first end electrically coupled to an output of atleast one of the plurality of transistors and a second end projectingoutwardly from the supporting structure and into the waveguide, theprobes being spaced from the rear wall a distance n(λ/4)+/−0.2 λ, whereλ is the nominal operating wavelength of energy passing between theprobes and the waveguide and n is an odd integer and wherein a firstportion of the probes has lengths different from a second portion of theprobes.
 11. A microwave structure, comprising: a waveguide having a rearwall; a plurality of sets of transistors, each one of the sets having aplurality of the transistors, disposed on a supporting structure; aplurality of sets of probes, each one of the probes in each one of thesets having a first end electrically coupled to an output of theplurality of transistors in such one of the sets, and a second endprojecting outwardly from the supporting structure and into thewaveguide, the probes being spaced from the rear wall a distancen(λ/4)+/−0.2 λ, where λ is the nominal operating wavelength of energypassing between the probes and the waveguide and n is an odd integer.12. The microwave structure recited in claim 11 wherein a first portionof the probes has lengths different from a second portion of the probes.13. A microwave structure, comprising: a waveguide having a rear wall; aplurality of probes, each one of the probes having an end projectingoutwardly into the waveguide, the probes being spaced from the rear walla distance n(λ/4)+/−0.2 λ, where λ is the nominal operating wavelengthof energy passing between the probes and the waveguide and n is an oddinteger and wherein a first portion of the probes has lengths differentfrom a second portion of the probes.
 14. The microwave structure recitedin claim 11 wherein the transistors are arranged as amplifiers.
 15. Amicrowave structure, comprising: a waveguide; a plurality of probes,each one of the probes having an end projecting into the waveguide; aplurality of transistors; and wherein each one of the probes is disposedon an electrode of a corresponding one of the transistors.
 16. Themicrowave structure recited in claim 15 wherein the probes are disposedin a common region of the waveguide having maximum electric field; 17.The microwave structure recited in claim 16 wherein the waveguide is arectangular waveguide and wherein the probes are arrayed along adirection perpendicular to narrow sidewalls of the waveguide and whereinthe energy passes through the waveguide along a direction parallel tothe sidewalls of the waveguide.
 18. A microwave structure, comprising: awaveguide; a monolithic integrated circuit having a plurality oftransistors; a plurality of probes, each one of the probes having an endprojecting outwardly from the monolithic integrated circuit supportingstructure and into the waveguide; and wherein each one of the probes isdisposed on an electrode of a corresponding one of the transistors. 19.The microwave structure recited in claim 18 wherein the probes aredisposed in a common region of the waveguide having maximum electricfield.
 20. The microwave structure recited in claim 18 wherein thewaveguide is a rectangular waveguide and wherein the probes are arrayedalong a direction perpendicular to narrow sidewalls of the waveguide andwherein the energy passes through the waveguide along a directionparallel to the sidewalls of the waveguide.
 21. The microwave structurerecited in claim 18 wherein the transistors are arranged as amplifiers.22. The microwave structure recited in claim 18 wherein the waveguideincludes a rear wall and wherein each one of the plurality of probes hasan end projecting outwardly into the waveguide, the probes being spacedfrom the rear wall a distance n(λ/4)+/−0.2 λ, where λ is the nominaloperating wavelength of energy passing between the probes and thewaveguide and n is an odd integer.